2002-01-07 page 1 preliminary data BSO203SP optimos ? ? ? ? -p small-signal-transistor product summary v ds -20 v r ds ( on ) 21 m ? i d -9 a feature ? p-channel ? enhancement mode ? super logic level (2.5 v rated) ? 150c operating temperature ? avalanche rated ? d v /d t rated sis00062 g 45 d s 36 d s 27 d s 18 top view d type package ordering code BSO203SP so 8 q67042-s4009 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -9 -7.2 a pulsed drain current t a =25c i d puls -36 avalanche energy, single pulse i d =-9 a , v dd =-10v, r gs =25 ? e as 97 mj reverse diode d v /d t i s =-9a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 2.35 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2002-01-07 page 2 preliminary data BSO203SP thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - - 35 k/w smd version, device on pcb: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) r thja - - - - 110 53 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -20 - - v gate threshold voltage, v gs = v ds i d =-100a v gs(th) -0.6 0.9 -1.2 zero gate voltage drain current v ds =-20v, v gs =0, t j =25c v ds =-20v, v gs =0, t j =150c i dss - - -0.1 -10 -1 -100 a gate-source leakage current v gs =-12v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.5v, i d =-7.1a r ds(on) - 22.3 34 m ? drain-source on-state resistance v gs =-4.5v, i d =-9a r ds(on) - 12.9 21 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air; t 10 sec.
2002-01-07 page 3 preliminary data BSO203SP electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max i d =-7.2a 16 33 - s input capacitance c iss v gs =0, v ds =-15v, f =1mhz - 2265 - pf output capacitance c oss - 890 - reverse transfer capacitance c rss - 728 - turn-on delay time t d ( on ) v dd =-10v, v gs =-4.5v, i d =-1a, r g =6 ? - 15.6 23 ns rise time t r - 27 40 turn-off delay time t d ( off ) - 58 77 fall time t f - 69 104 gate charge characteristics gate to source charge q g s v dd =-15v, i d =-9a - -3.8 -5.7 nc gate to drain charge q g d - -15.6 -23.4 gate charge total q g v dd =-15v, i d =-9a, v gs =0 to -4.5v - -33.6 -50.4 gate plateau voltage v (p lateau ) v dd =-15v, i d =-9a - -1.6 - v reverse diode inverse diode continuous forward current i s t a =25c - - -3 a inverse diode direct current, pulsed i sm - - -36 inverse diode forward voltage v sd v gs =0, | i f | = | i d | - -0.82 -1.25 v reverse recovery time t rr v r =-10v, | i f | = | l d |, d i f /d t =100a/s - 34 42 ns reverse recovery charge q rr - 16.7 21 nc
2002-01-07 page 4 preliminary data BSO203SP 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 w 2.6 BSO203SP p tot 2 drain current i d = f ( t a ) parameter: | v gs | 4.5 v 0 20 40 60 80 100 120 c 160 t a 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 BSO203SP i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -1 -10 0 -10 1 -10 2 -10 a BSO203SP i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 120.0 s 4 transient thermal impedance z thjs = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w BSO203SP z thjs single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2002-01-07 page 5 preliminary data BSO203SP 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 2 4 6 v 10 - v ds 0 10 20 30 40 50 60 70 a 90 - i d vgs = -2.5v vgs = -3v vgs = -3.5v vgs = -2v vgs = -4v vgs = -4.5v vgs = -7v vgs = -10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 60 a 80 - i d 0 0.01 0.02 0.03 ? 0.05 r ds(on) vgs = -3v vgs = -2.5v vgs= - 3.5v vgs = - 4v vgs = - 4.5v vgs= - 7v vgs = - 10v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 v 3 - v gs 0 5 10 15 20 25 a 35 - i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: t p = 80 s 0 5 10 15 20 25 a 35 - i d 0 10 20 30 40 s 60 g fs
2002-01-07 page 6 preliminary data BSO203SP 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = -9 a, v gs = -4.5 v -60 -20 20 60 100 c 160 t j 5 10 15 20 m ? 30 r ds(on) typ. 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 160 t j 0 0.25 0.5 0.75 1 v 1.5 - v gs(th) typ. 98% 2% 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 v -3 v sd -1 -10 0 -10 1 -10 2 -10 a BSO203SP i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 5 v 15 - v ds 2 10 3 10 4 10 pf c c rss c iss c oss
2002-01-07 page 7 preliminary data BSO203SP 13 typ. avalanche energy e as = f ( t j ), par.: i d = -9 a v dd = -10 v, r gs = 25 ? 25 50 75 100 c 150 t j 0 10 20 30 40 50 60 70 80 mj 100 e as 14 typ. gate charge | v gs | = f ( q gate ) parameter: i d = -9 a pulsed 0 10 20 30 40 nc 60 | q gate | 0 1 2 3 4 5 6 7 8 9 10 v 12 - v gs 0.2 vds max. 0.5 vds max. 0.8 vds max. 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 BSO203SP v (br)dss
2002-01-07 page 8 preliminary data BSO203SP published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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